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PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET(R) Power MOSFET
D
l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 60V RDS(on) = 0.023
G S
ID = 48A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications.
D 2 Pak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
48 34 192 110 0.71 20 220 29 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.4 --- 62
Units
C/W
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1
11/18/97
IRFZ44ES/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 60 --- --- 2.0 15 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.063 --- --- --- --- --- --- --- --- --- --- 12 60 70 70 7.5 1360 420 160
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 29A ns --- RG = 15 --- RD = 1.1, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 48 --- --- showing the A G integral reverse --- --- 192 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Uses IRFZ44E data and test conditions
Starting TJ = 25C, L = 520H
RG = 25, IAS = 29A. (See Figure 12)
I 29A, di/dt 320A/s, VDD V(BR)DSS, SD
TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.
2
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IRFZ44ES/L
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
4.5V
10
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100 1 0.1 1
20s PULSE WIDTH TJ = 175 C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 48A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 175 C
100
1.5
1.0
10
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFZ44ES/L
2500
VGS , Gate-to-Source Voltage (V)
2000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 29 VDS = 48V VDS = 30V
16
C, Capacitance (pF)
Ciss
1500
12
Coss
1000
8
500
Crss
4
0 1 10 100
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
100 T = 175 C J
100
10us
100us
10
10
TJ = 25 C
1ms
1 0.5
V GS = 0 V
1.0 1.5 2.0 2.5
1 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms
100
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFZ44ES/L
RD
50 50
V DS VGS D.U.T.
+ V DD
I D , Drain Current (A) I D , Drain Current (A)
40 40
RG
-
30 30
10V
Pulse Width 1 s Duty Factor 0.1 %
20 20
Fig 10a. Switching Time Test Circuit
VDS 90%
10 10
0
0 25 25
50 50
75
100
125
150
75 125 150 TC , Case 100 Temperature ( C) TC , Case Temperature ( C)
175 175
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.1
0.05 0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ44ES/L
EAS , Single Pulse Avalanche Energy (mJ)
500
15V
TOP
400
BOTTOM
ID 12A 21A 29A
VDS
L
D R IV E R
RG
20V
D .U .T
IA S tp
300
+ - VD D
A
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
100
0 25 50 75 100 125 150 175
Starting T , Junction Temperature C) ( J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ44ES/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFZ44ES/L
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2
4.69 (.185) 4.20 (.165)
-B1.32 (.052) 1.22 (.048)
10.16 (.400) REF.
6.47 (.255) 6.18 (.243) 15.4 9 (.610) 14.7 3 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.8 9 (.350) REF.
1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 (.200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450)
N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER F530S 9246 9B 1M
A
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
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8
IRFZ44ES/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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IRFZ44ES/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 )
2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4
330.00 (14.173) M A X.
6 0.0 0 (2 .3 6 2) M IN .
N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
26 .40 (1.039) 24 .40 (.961) 3
3 0.4 0 (1 .1 97 ) MAX. 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97
10
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